Inductively coupled reactive ion etching technology is a type of RIE; This technology achieves decoupling of plasma ion density and ion energy by independently controlling ion flux, improving the control accuracy and flexibility of etching processes.

The high-density inductively coupled reactive ion etching (ICP-RIE) series products independently developed by Sanhe Union are based on inductively coupled plasma technology, targeting the needs of fine etching and compound semiconductor etching. It has excellent process stability and repeatability, suitable for applications in silicon semiconductors, optoelectronics, information and communication, power devices, and microwave devices.

Main configuration of inductively coupled plasma etching machine (ICP)：

1. Support sample size: 4/6/8/12 inches downward compatible, compatible with various small-sized samples, supports customization;

2. RF plasma power range:

Upper electrode: 1000/2000/3000/5000 W optional;

Lower electrode: 300/500/1000 W optional;

3. Molecular pump: 620/1300 l/s optional, optional with anti-corrosion pump set;

4. Front stage pump: mechanical oil pump/dry pump optional;

5. Pressure control: 0~0.1/0~1/0~10 Torr optional;

6. Process gas: Up to 12 process gases can be equipped simultaneously;

7. Gas range: determined according to user application requirements and system design, selectable within the range of 0~500 sccm;

8. Sample temperature control: -30 ℃/10 ℃~room temperature/200 ℃, customizable temperature range;

9. Back helium cooling can be configured according to the application;

10. Detachable anti pollution lining;

11. Load lock is optional;

12. Fully automatic one key control system;

Inductively Coupled Plasma Etching Machine (ICP) Suitable Materials：

1. Silicon based materials: silicon (Si), silicon dioxide (SiO2), silicon nitride (SiNx), silicon carbide (SiC)

2. III-V materials: Indium Phosphide (InP), Gallium Arsenide (GaAs), Gallium Nitride (GaN)

3. II-VI material: cadmium telluride (CdTe)
   

4. Magnetic/alloy materials

5. Metal materials: aluminum (Al), gold (Au), tungsten (W), titanium (Ti), tantalum (Ta)

6. Organic materials: photoresist (PR), organic polymers (PMMA/HDMS), organic thin films

7. Ferroelectric/optoelectronic materials: lithium niobate (LiNbO3)

8. Dielectric materials: Sapphire (Al2O3), Quartz

Application of Inductively Coupled Plasma Etching Machine (ICP)：

1.Inductively coupled plasma etching machine (ICP) related applications: 1. Grating etching: used for 3D display, micro optical devices, optoelectronics, etc;

2.Compound semiconductor etching: used for LED, laser, optical communication, etc;

3.Graphic sapphire substrate (PSS);

4.Lithium niobate (LiNO3) etching: detector, photoelectron;

Application results of inductively coupled plasma etching machine (ICP)：

Quartz grating etching, used for 3D display, etching depth: 530 nm, etching rate: 130 nm/min

Graphically etched sapphire LED substrate (PSS), etching depth: 1.3 μ m, etching rate: 55 nm/min, photoresist selectivity ratio: 0.63

Gallium Nitride (GaN) Etching for LED Electrode, LED/LD Application, Etching Depth: 1.1 μ m, Etching Rate: 230 nm/min

Indium phosphide (InP) platform structure etching, LD/optoelectronic applications, etching depth: 1.1 μ m, etching speed: 310 nm/min, substrate temperature: 190 ℃

Indium phosphide (InP) platform structure silicon oxide (SiO2) grating structure etching, etching depth: 300 nm, etching rate: 130 nm/min etching

Unshielded hollow silicon nanocolumn etching, column height: 3.9 μ m, diameter:~100 nm, etching rate: 80 nm/min

Inductively Coupled Plasma Etching Machine (ICP) Series Models:

1.SHL 150/200S-ICP

2.SHL 150/200CS-ICP

3.SHL 300C-ICP

Inductively Coupled Plasma Etching (ICP) Equipment Layout:

ICPRIE machine layout