The reactive ion etching machine (RIE) series products independently developed by Beijing Sanhe Lian Technology Co., Ltd. are based on flat plate capacitive coupled plasma technology. The domestically produced RIE machines are suitable for patterned etching of silicon-based materials such as monocrystalline silicon, polycrystalline silicon, silicon nitride (SiNx), silicon oxide (SiO2), quartz (Quartz), and silicon carbide (SiC), and are high-quality products of domestic RIE machines.
Reactive ion etching (RIE) can be used to prepare micro nano structures and is a type of semiconductor manufacturing process technology. During the RIE etching process, various active particles in the plasma form volatile products with the material surface. These products are carried away from the surface of the material, ultimately achieving anisotropic microstructure etching on the material surface.
The reactive ion etching (RIE) series products independently developed by Beijing Sanhe Union are based on flat plate capacitive coupled plasma technology and are suitable for patterned etching of silicon-based materials such as monocrystalline silicon, polycrystalline silicon, silicon nitride (SiNx), silicon oxide (SiO2), quartz (Quartz), and silicon carbide (SiC); Can be used for patterning and material delamination etching of organic materials such as photoresist (PR), PMMA, HDMS, etc; Can be used for physical etching of metal materials such as nickel (Ni), chromium (Cr), and ceramic materials; Can be used for etching indium phosphide (InP) materials at room temperature. For some etching processes with high requirements, our ICPRIE etching can also be used.
1. Support sample sizes: 4, 8, 12 inches, compatible with various small-sized samples, and support customization
2. RF plasma power range: 300/500/1000 W optional;
3. Molecular pump: 620/1300 l/s optional, optional with anti-corrosion pump set;
4. Front stage pump: mechanical oil pump/dry pump optional;
5. Pressure control: 0~1 Torr optional; Non pressure control mode configuration can also be selected;
6. Process gas: Up to 9 process gases can be equipped simultaneously;
7. Gas range: determined according to user application requirements and system design, selectable within the range of 0~1000 sccm;
8. Sample temperature control: 10 ° C~room temperature/-30 ° C~room temperature/customizable temperature range;
9. Back helium cooling can be configured according to the application;
10. Detachable anti pollution lining;
11. Load lock is optional;
12. Fully automatic one key control system;