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Furnace tube chemical vapor deposition (TFCVD)

  • Furnace tube chemical vapor deposition
As a domestic manufacturer of furnace tube chemical vapor deposition (TFCVD) machines, Beijing Sanhe Union has been playing its own role in independent research and development, and building the domestic TFCVD machine brand. Contact number: 18910215538
Beijing furnace tube chemical vapor deposition machine, China furnace tube chemical vapor deposition machine manufacturer, China furnace tube chemical vapor deposition machine brand

The furnace tube chemical vapor deposition (TFCVD) machine in Beijing Sanhe Union belongs to thermal CVD, which uses high temperature to drive precursor decomposition and thin film growth. The Sanhe Union TFCVD series machines are domestically developed furnace tube chemical vapor deposition machines for large-area two-dimensional (2D) material growth, which can achieve both continuous thin film growth and atomic layer thin film growth. Domestic brand, trustworthy.

The Beijing Sanhe furnace tube chemical vapor deposition machine (TFCVD) belongs to thermal CVD, which uses high temperature to drive precursor decomposition and thin film growth. The Sanhe Union TFCVD series machines are developed for large-area two-dimensional (2D) material growth, which can achieve both continuous thin film growth and atomic layer thin film growth.

Main configuration of Sanhe furnace tube chemical vapor deposition (TFCVD):

1. Support sample size: 6 inches downward compatible, compatible with various small-sized samples;

2. Temperature range: Room temperature~800/1000/1200 degrees optional, temperature control accuracy ± 3 ℃ @>200 ℃;

3. Single/double-layer quartz tube design;

4. Front stage pump: mechanical oil pump/dry pump optional;

5. Pressure control: 0~10 Torr is optional, and non pressure control mode configuration can also be selected;

6. Process gases: H2, O2, N2, Ar;

7. Gas range: determined according to user application requirements and system design, selectable within the range of 0~300 sccm;

8. Precursor source: configurable powder/liquid/solid precursor sources, up to 8 channels, supporting bubbling/loading and mixed drive precursor sources;

9. The temperature control range of the source can be customized from 5 to 200 ℃;

10. Optional plasma module;

11. Fully automatic one key control system;