The domestically developed ICP induction coupled plasma etching machine by Beijing Sanhe Lian Technology Co., Ltd. has accumulated a large number of effective process parameters and experience through long-term process verification and customer on-site practical application. It can not only achieve efficient and precise etching of silicon carbide (SiC), but also etch other silicon-based materials, III-V materials, II-VI materials, magnetic materials, metal materials, and organic materials, and can achieve deep etching of silicon. Although ICP etching has many advantages, it still faces challenges such as groove effects in the processing of silicon carbide.

Groove Effect and Challenges in ICP (Inductively Coupled Plasma Etching Machine) Etching

The groove effect is a phenomenon of uneven etching on the substrate surface caused by ion reflection and charge effects, which may pose potential hazards to the manufacturing and reliability of devices. Research has shown that adding oxygen gas enhances the trench effect as it forms a passivation layer SiFxOy.

We take measures to optimize process parameters to achieve efficient etching in response to the challenges posed by groove effects in ICP (Inductively Coupled Plasma Etching) etching.

Using low pressure plate power to reduce nickel sputtering, while using high ICP coil power and low pressure (8mTor) to ensure high etching rate and avoid micro groove effects. Through this method, an etching rate of 940nm/min was obtained, with a Ni/SiC selectivity ratio of around 60 and a profile angle of around 83 °.

Beijing Sanhe Lian Technology Co., Ltd. has established the Chinese ICP (Inductively Coupled Plasma Etching Machine) brand, providing assistance for the etching of domestic inductively coupled plasma etching machines!