Silicon carbide (SiC) has shown great potential for development in electronic applications, sensors, microelectromechanical systems (MEMS), and ultra-high voltage power devices due to its excellent physical and chemical properties. However, in order to achieve these advanced structures, efficient deep etching techniques are required. Inductively coupled plasma (ICP) etching, as a high-density plasma dry etching technique, can meet the requirements of deep etching of silicon carbide and achieve residue free and high etching rate processing.

Beijing Sanhe Lian is a manufacturer of ICP inductively coupled plasma etching machines in China. Welcome to consult and visit for inspection. Contact phone number: 18910215538