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APPLICATION > Two-dimensional material growth

Two-dimensional material growth

  • Application of two-dimensional material growth equipment
Beijing Sanhelian insists on independently developing a series of two-dimensional material growth equipment products. The application direction of domestic two-dimensional material growth machines is the 4-inch wafer level growth of WS2 and MoS2 two-dimensional materials. This column displays the application results and other related information of the two-dimensional material growth machine for you.
Two-dimensional material growth

Two dimensional electronic thin film materials refer to new two-dimensional materials with single or few atomic layer thicknesses mainly formed by covalent bonding.

Mainly includes:

  • Graphene, boron nitride (h-BN);

  • Transition metal oxides;

  • Transition metal sulfide materials (TMCs), MX2 (M=Mo, W, Re, Ti, Zr, Hf, V, Nb, Ta, Pt, Pd, Fe; X=S, Se, Te), commonly such as

molybdenum sulfide (MoS2), tungsten sulfide (WS2), etc

  • Some III/IV/V sulfur based materials, etc.


Common typical two-dimensional (2D) material systems

Common typical two-dimensional (2D) material systems


Two dimensional material growth solution - SHL 100-FTCVD

For the large-area single crystal growth of WS2 and MoS2 two-dimensional materials, we have also developed an SHL 100-FTCVD two-dimensional material growth machine based on high-temperature CVD technology.

SHL 100-FTCVD 2D Material Growth Machine. jpg

SHL 100-FTCVD two-dimensional material growth machine

Application direction of two-dimensional material growth machine:


      4-inch wafer level growth of WS2 and MoS2 two-dimensional materials

      

     Core indicators and configuration of two-dimensional material growth machine:


1. It can handle small-sized samples up to four inches in size;

2. Three temperature zone design, working temperature range: room temperature~1500 ℃;

3. Independently develop an intelligent automatic temperature rise control system, with a temperature overshoot of less than 1% (@>300 ℃) and a temperature control accuracy of ± 1 ℃;

4. It can be configured with 6 independent injection organic sources, each of which supports both loaded mode and bubble mode simultaneously;

5. Can support extremely low flow bubbling of 0.05~1 sccm, and can also support high flow bubbling of 5~300 sccm;

6. Equipped with a controlled small flow precursor injection system, it can accurately and stably control the precursor injection volume;

7. Up to four process gases can be configured;

8. Fully automatic control system, supporting multi-stage and multi-step continuous film control with more than 100 steps, and the continuous automatic control of film can last for more than 24 hours;

9. Fully automatic real-time collection and recording of process data;



    Application results of two-dimensional material growth machine:

Application of two-dimensional material growth machine
Application results of two-dimensional material growth machine:


2 nm WS2 Raman spectroscopy test

2 nm WS2 Raman spectroscopy test



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