The domestically produced ion beam etching (IBE) series products independently developed by Beijing Sanhe Union adopt radio frequency ion source technology, with excellent process stability and repeatability, suitable for failure analysis, metal etching, material etching and other related applications.

The main configuration of ion beam etching machine (IBE) is:

Support sample size: 4-inch downward compatible, compatible with various small-sized samples;

Ion source: ion energy (50~1500) ± 2 V, ion flux (100~1500) ± 2 mA, beam collimation<± 5 °, beam non-uniformity<± 2%, 500 h process stabilization time;

Molecular pump: high pumping speed molecular pump;

Front stage pump: dry pump;

Process pressure: 0.01~10 Pa;

Ionic source configurable gases: Ar, O2, N2, He, H2, auxiliary gases configurable: O2, CF4, CHF3, SF6, N2;

Gas range: determined according to user application requirements and system design, selectable within the range of 0~500 sccm;

Sample temperature control: -30 ℃~room temperature;

Sample stage: 0~50 rpm rotation/0~90 ° tilt/low temperature, coexistence of three-dimensional functions;

Etching speed: 1~100 nm/min;

Etching uniformity: ± 5% (@ four inch removal of edge effects);

Fully automatic one key control system;

Etching material: full material;

Application of Ion Beam Etching Machine (IBE):

Chip Failure Analysis (FA) copper wire removal;

Magnetic applications;

Physical etching of patterns to remove layers;

Thinning of biological samples;

Application results of ion beam etching machine (IBE):

Copper (Cu) etching, chip failure analysis (FA) application, etching depth: 2.9 μ m, etching rate: 97 nm/min, SiO2 etching rate: 88 nm/min

55nm chip etching M7 layer, left side untreated, right side treated

55nm chip etching left M3 untreated right M2 treated

55nm chip etching left M3 untreated right M2 treated

Application Of Ion Beam Etching (Ibe) Equipment Failure Analysis:

The application of ion beam etching in chip failure analysis is mainly for chip fault analysis and fault localization. When a chip malfunctions, it is necessary to analyze and locate the chip in order to identify the cause of the malfunction and carry out repairs. Ion beam etching can observe the internal structure of the chip and the state of components by etching the surface of the chip, thereby helping to analyze and locate chip faults. Specific applications include:

1.  Etching chip surface: Ion beam etching can observe the internal structure of the chip and the state of components by etching the chip surface, thereby helping to analyze and locate chip faults.

2.   Making cross-sectional samples: Ion beam etching can produce cross-sectional samples of chips, which can observe the internal structure of chips and the status of components, helping to analyze and locate chip faults.

3.  Making transmission electron microscope (TEM) samples: Ion beam etching can produce TEM samples, which can observe the internal structure of the chip and the state of the components, helping to analyze and locate chip faults.

4.  Making scanning electron microscope (SEM) samples: Ion beam etching can produce SEM samples, which can observe the internal structure of chips and the status of components, helping to analyze and locate chip faults.
   

5.  In summary, ion beam etching has a wide range of applications in chip failure analysis, which can help analyze and locate chip faults, thereby improving the reliability and stability of chips.

The ion beam etching (IBE) series products independently developed by Beijing Sanhe Union

The ion beam etching (IBE) series products independently developed by Beijing Sanhe Union. Ion beam etching is a high-precision and high-efficiency micro nano processing technology widely used in semiconductor, optoelectronics, microelectromechanical systems (MEMS), nanotechnology and other fields. It is an energetic particle sputtering etching. IBE achieves controlled removal of materials by regulating ion beam energy and flux. This technology can almost achieve etching of the entire material, and by adjusting the process parameters, it can simultaneously remove multiple materials at a constant speed; In addition, adding specific process gases can achieve ion assisted reactive etching of materials.

The domestically produced ion beam etching (IBE) series products independently developed by Beijing Sanhe Union adopt radio frequency ion source technology, which has excellent process stability and repeatability, suitable for failure analysis, metal etching, material etching and other related applications.

Ion Beam Etching Machine (IBE) Series Models:

1. SHL FA100S-IBE

2. SHL 100S-IBE

Layout of Ion Beam Etching (IBE) Equipment:

IBE machine layout